Cite
HARVARD Citation
Jin, C. et al. (2016). Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors. Solid-state electronics. pp. 106-110. [Online].
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Jin, C. et al. (2016). Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors. Solid-state electronics. pp. 106-110. [Online].