Cite
HARVARD Citation
Shi, R. et al. (2016). Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. Microelectronics and reliability. pp. 64-68. [Online].
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Shi, R. et al. (2016). Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. Microelectronics and reliability. pp. 64-68. [Online].