Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter. (26th April 2016)

• Record Type: Journal Article
• Authors: Park, Junsu; Kim, Minseok; Yeom, Seung-Won; Ha, Hyeon Jun; Song, Hyenggun; Min Jhon, Young; Kim, Yun-Hi; Ju, Byeong-Kwon
• Is Part Of: Nanotechnology. Volume 27:Number 22(2016)
• Publication Date: 2016-04-26
• Subjects: printed electronics -- reverse offset printing -- ambipolarity -- organic semiconductor -- field-effect transistors -- complementary inverter; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/22/225302
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2 CO3 ) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm 2 V −1 s −1 for the p-channel and 0.027 cm 2 V −1 s −1 for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2 CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.