Cite
HARVARD Citation
Lim, D. et al. (2016). High performance MoS2-based field-effect transistor enabled by hydrazine doping. Nanotechnology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Lim, D. et al. (2016). High performance MoS2-based field-effect transistor enabled by hydrazine doping. Nanotechnology. p. . [Online].