Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles. (6th November 2015)

• Record Type: Journal Article
• Authors: Ha, Hyeon Jun; Kang, Byung Hyun; Yeom, Seung-Won; Park, Junsu; Lee, Yun-Hi; Ju, Byeong-Kwon
• Is Part Of: Nanotechnology. Volume 26:Number 48(2015)
• Publication Date: 2015-11-06
• Subjects: localized surface plasmon -- Schottky barrier diode -- silicon nanomembrane -- Au nanoparticle -- photosensor -- strain sensor; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/48/485501
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency ( of 34%, a photosensitivity ( of 27 at a voltage bias of −5 V, a light intensity of 1.2 W cm −2, and a responsivity ( of 0.21 A W −1 . Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.