Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics. (4th November 2015)

• Record Type: Journal Article
• Authors: Bartolomeo, Antonio Di; Giubileo, Filippo; Romeo, Francesco; Sabatino, Paolo; Carapella, Giovanni; Iemmo, Laura; Schroeder, Thomas; Lupina, Grzegorz
• Is Part Of: Nanotechnology. Volume 26:Number 47(2015)
• Publication Date: 2015-11-04
• Subjects: graphene -- transistor -- contact -- niobium -- transfer characteristic -- doping -- conductivity; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/47/475202
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10 −4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.