Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs. (9th April 2015)

• Record Type: Journal Article
• Authors: Takahashi, N; Watanabe, K; Taniguchi, T; Nagashio, K
• Is Part Of: Nanotechnology. Volume 26:Number 17(2015)
• Publication Date: 2015-04-09
• Subjects: dielectric constant -- capacitance -- molecular electronegativity; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/17/175708
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The combination of h -BN and high- k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h -BN. We investigated the deposition of Y2 O3 on h -BN using atomic layer deposition. The deposition of Y2 O3 on h -BN was confirmed without any buffer layer. An increase in the deposition temperature reduced the surface coverage. The deposition mechanism could be explained by the competition between the desorption and adsorption of the Y precursor on h -BN due to the polarization. Although a full surface coverage was difficult to achieve, the use of an oxidized metal seeding layer on h -BN resulted in a full surface coverage.