Electronic structure evolution of single bilayer Bi(1 1 1) film on 3D topological insulator Bi2SexTe3−x surfaces. (10th May 2016)

• Record Type: Journal Article
• Authors: Lei, Tao; Jin, Kyung-Hwan; Zhang, Nian; Zhao, Jia-Li; Liu, Chen; Li, Wen-Jie; Wang, Jia-Ou; Wu, Rui; Qian, Hai-Jie; Liu, Feng; Ibrahim, Kurash
• Is Part Of: Journal of physics. Volume 28:Number 25(2016)
• Publication Date: 2016-05-10
• Subjects: electronic structure -- Bi(1 1 1) film -- ARPES -- interfacial interaction -- topological insulator; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/28/25/255501
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: The electronic state evolution of single bilayer (1BL) Bi(1 1 1) deposited on three-dimensional (3D) Bi2 Se x Te3− x topological insulators at x = 0, 1.26, 2, 2.46, 3 is systematically investigated by angle-resolved photoemission spectroscopy (ARPES). Our results indicate that the electronic structures of epitaxial Bi films are strongly influenced by the substrate especially the topmost sublayer near the Bi films, manifesting in two main aspects. First, the Se atoms cause a stronger charge transfer effect, which induces a giant Rashba-spin splitting, while the low electronegativity of Te atoms induces a strong hybridization at the interface. Second, the lattice strain notably modifies the band dispersion of the surface bands. Furthermore, our experimental results are elucidated by first-principles band structure calculations.