Ambient temperature epitaxial growth of MgB2 thin films with a Mg buffer layer. (21st October 2015)

• Record Type: Journal Article
• Authors: Shishido, Hiroaki; Yoshida, Takuya; Ishida, Takekazu
• Is Part Of: Applied physics express. Volume 8:Number 11(2015:Nov.)
• Publication Date: 2015-10-21
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.113101
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We grew crystalline MgB2 thin films using molecular beam epitaxy at a low substrate temperature of 110 °C under an ultrahigh vacuum of about 10 −6 Pa. MgB2 thin films were deposited on the (001) surface of a 4H-SiC substrate with an epitaxial Mg buffer layer. Superior crystallinity and surface flatness were confirmed by in situ reflection high-energy electron diffraction and X-ray diffraction measurements. The growth temperature was lower than any in prior reports on superconducting MgB2 thin films. Moreover, we successfully confirmed the occurrence of a sharp superconducting transition at 27.2 K.