Suppressing the cellular breakdown in silicon supersaturated with titanium. (17th May 2016)

• Record Type: Journal Article
• Authors: Liu, Fang; Prucnal, S; Hübner, R; Yuan, Ye; Skorupa, W; Helm, M; Zhou, Shengqiang
• Is Part Of: Journal of physics. Volume 49:Number 24(2016)
• Publication Date: 2016-05-17
• Subjects: ion implantation -- solid phase epitaxy -- liquid phase epitaxy -- Si -- cellular breakdown; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/24/245104
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.