GaN-based single-chip frontend for next-generation X-band AESA systems. Issue 5 (17th April 2018)

• Record Type: Journal Article
• Authors: Schuh, Patrick; Sledzik, Hardy; Reber, Rolf
• Editors: Kallfass, Ingmar; Vossiek, Martin; A. Hein, Matthias
• Is Part Of: International journal of microwave and wireless technologies. Volume 10:Issue 5/6(2018)
• Page Start: 660
• Page End: 665
• Publication Date: 2018-04-17
• Subjects: Active circuits, -- RF frontends, -- transmit/receive module; Wireless communication systems -- Periodicals; Microwave circuits -- Periodicals; Radio frequency -- Periodicals; 621.381305
• DOI: 10.1017/S1759078718000557
• Languages: English
• ISSNs: 1759-0787

Abstract

Abstract: A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside a T / R module. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chip T / R module frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit ( TX ) output power over the whole frequency range with peak power up to 17 W. The frontend in receive ( RX ) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.