A compact low loss high isolation DC-45GHz SPST switch in 0.13-μm CMOS process. (October 2018)

• Record Type: Journal Article
• Authors: Deng, Chun; Yang, Hong-Qiang; Gong, Min
• Is Part Of: Microelectronics journal. Volume 80(2018)
• Page Start: 1
• Page End: 6
• Publication Date: 2018-10
• Subjects: Single-pole-single-throw (SPST) switch -- MMIC -- High isolation -- 0.13-μm CMOS; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2018.04.012
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: A compact low loss high isolation wideband single-pole-single-throw (SPST) switch that operates from DC to 45 GHz is analyzed and implemented in 0.13-μm CMOS process. Based on series-shunt topology and traveling-wave concept, the SPST switch achieves broadband characteristics. With circuit analysis and optimization, the switch exhibits insertion loss lower than 3 dB, isolation higher than 47 dB and return loss below −13 dB from DC to 45 GHz. The input 1-dB compression point is 10dBm with a 1.5 V control voltage. The SPST switch has a compact core area of 350 μm × 80 μm.