Cite
HARVARD Citation
Chuang, P. et al. (2018). Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator. RSC advances. 8 (1), pp. 423-428. [Online].
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Chuang, P. et al. (2018). Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator. RSC advances. 8 (1), pp. 423-428. [Online].