P‐substrate InP‐based 1.5 μm lasers using an internal carbon‐doped layer to block p‐dopant diffusion. Issue 10 (26th September 2018)

• Record Type: Journal Article
• Authors: Duggan, Shane P.; Yang, Hua; Kelly, Niall P.; Caro, Ludovic; Dernaika, Mohamad; Shayesteh, Maryam; Gocalinska, Agnieszka; Thomas, Kevin; Pelucchi, Emanuele; Corbett, Brian; Peters, Frank H.
• Is Part Of: Microwave and optical technology letters. Volume 60:Issue 10(2018:Oct.)
• Page Start: 2363
• Page End: 2367
• Publication Date: 2018-09-26
• Subjects: photonic integrated circuits -- optoelectronic devices -- semiconductor -- lasers -- indium phosphide -- semiconductor epitaxial layers; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.31364
• Languages: English
• ISSNs: 0895-2477

Abstract

Abstract: P‐substrate AlGaInAs/InP lasers are enabled using an internal carbon‐doped layer to block Zn‐diffusion. These inverted lasers are developed for the aim of further monolithic vertical integration with passive or active material, which would allow full system on‐chip integration. The lasers emit at 1.5μ m making them ideal for telecommunication applications. Different p‐substrate laser designs were grown to quantify the effect the carbon doped layer had on blocking Zn p‐dopants diffusion, which permits the long growths necessary for vertical integration. Current, voltage, and capacitance measurements were used to examine the different laser designs, proving that Zn p‐dopant diffusion is responsible for p‐substrate laser failure.