Chemical Growth of 1T‐TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity. Issue 38 (1st August 2018)

• Record Type: Journal Article
• Authors: Wang, Xinsheng; Liu, Haining; Wu, Juanxia; Lin, Junhao; He, Wen; Wang, Hui; Shi, Xinghua; Suenaga, Kazutomo; Xie, Liming
• Is Part Of: Advanced materials. Volume 30:Issue 38(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-08-01
• Subjects: 2D materials -- bolometers -- charge density waves -- chemical vapor deposition -- TaS2; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201800074
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Ultrathin two‐dimensional (2D) charge density wave (CDW) materials, with sharp resistance change at the phase‐transition temperature, yet with ultrathin thickness, hold great potential for electrical device applications. However, chemical synthesis of high‐quality samples and observation of the CDW states down to the monolayer limit is still of great challenge. Chemical vapor deposition of 1 T ‐TaS2 sheets on hexagonal boron nitride ( h ‐BN) with robust CDW states even down to the monolayer extreme is reported here. Further, based on the near commensurate CDW to incommensurate CDW phase transition with a high temperature coefficient of resistance (TCR), highly responsive room‐temperature bolometers are fabricated by suspending the as‐grown 1 T ‐TaS2 sheets. Abstract : Observation of charge density wave (CDW) states at the monolayer limit is of great challenge. By using hexagonal boron nitride as a substrate, chemical vapor deposition of atomically thin 1 T ‐TaS2 sheets and observation of CDW phase transitions down to the monolayer extreme are achieved. Further, highly bolometric responsivity is demonstrated on 1 T ‐TaS2 sheets.