Anisotropic Magneto‐Coulomb Properties of 2D–0D Heterostructure Single Electron Device. Issue 38 (6th August 2018)

• Record Type: Journal Article
• Authors: Mouafo, Louis Donald Notemgnou; Godel, Florian; Melinte, Georgian; Hajjar‐Garreau, Samar; Majjad, Hicham; Dlubak, Bruno; Ersen, Ovidiu; Doudin, Bernard; Simon, Laurent; Seneor, Pierre; Dayen, Jean‐Francois
• Is Part Of: Advanced materials. Volume 30:Issue 38(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-08-06
• Subjects: Coulomb blockade -- graphene -- magneto‐Coulomb effect -- spintronics -- van der Waals heterostructures; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201802478
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Fabrication and spintronics properties of 2D–0D heterostructures are reported. Devices based on graphene ("Gr")–aluminium nanoclusters heterostructures show robust and reproducible single‐electron transport features, in addition to spin‐dependent functionality when using a top magnetic electrode. The magnetic orientation of this single ferromagnetic electrode enables the modulation of the environmental charge experienced by the aluminium nanoclusters. This anisotropic magneto‐Coulomb effect, originating from spin–orbit coupling within the ferromagnetic electrode, provides tunable spin valve‐like magnetoresistance signatures without the requirement of spin coherent charge tunneling. These results extend the capability of Gr to act both as electrode and as a platform for the growth of 2D–0D mixed‐dimensional van der Waals heterostructures, providing magnetic functionalities in the Coulomb blockade regime on scalable spintronic devices. These heterostructures pave the way towards novel device architectures at the crossroads of 2D material physics and spin electronics. Abstract : The spintronics properties of 2D–0D heterostructures are unveiled. An anisotropic magneto‐Coulomb effect, mediated by spin–orbit coupling within a single ferromagnetic electrode, provides tunable spin‐valve‐like magnetoresistance signatures and controllable magnetic modulation of the device's single‐electron charge states. These heterostructures pave the way towards scalable nanospintronics device architectures at the crossroads of 2D material physics and spin electronics.