Ambipolar remote graphene doping by low-energy electron beam irradiation. Issue 37 (12th September 2018)

• Record Type: Journal Article
• Authors: Stará, Veronika; Procházka, Pavel; Mareček, David; Šikola, Tomáš; Čechal, Jan
• Is Part Of: Nanoscale. Volume 10:Issue 37(2018)
• Page Start: 17520
• Page End: 17524
• Publication Date: 2018-09-12
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c8nr06483k
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : By employing low-energy electron beam irradiation, full range n- and p-graphene doping can be achieved. Abstract : We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved.