Cite
HARVARD Citation
Djara, V. et al. (2016). Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal. Solid-state electronics. pp. 103-108. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Djara, V. et al. (2016). Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal. Solid-state electronics. pp. 103-108. [Online].