Cite
HARVARD Citation
Ding, L. et al. (2016). Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs. Solid-state electronics. pp. 146-151. [Online].
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Ding, L. et al. (2016). Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs. Solid-state electronics. pp. 146-151. [Online].