Effect of Mn and Ni codoping on ion dynamics of nanocrystalline cobalt ferrite: A structure property correlation study. (1st December 2015)

• Record Type: Journal Article
• Authors: Chakrabarty, S.; Dutta, A.; Pal, M.
• Is Part Of: Electrochimica acta. Volume 184(2015)
• Page Start: 70
• Page End: 79
• Publication Date: 2015-12-01
• Subjects: Nanostructured materials -- TEM -- Rietveld analysis -- Microstructure -- Impedance spectroscopy; Electrochemistry -- Periodicals; Electrochemistry, Industrial -- Periodicals; 541.37
• DOI: 10.1016/j.electacta.2015.10.027
• Languages: English
• ISSNs: 0013-4686

Abstract

Graphical abstract: Highlights: Single phase codoped cobalt ferrite nanoparticles using co-precipitation route. Doping causes formation of mixed spinel ferrite phase. UV–vis spectroscopy suggests blue and red shift for doped samples. Both grain and grain boundary contributed in electrical conductivity. Doped samples showed enhanced dielectric and resistive properties. Abstract: Effect of Mn and Ni codoping on structure, optical and electrical properties of cobalt ferrite nanoparticles prepared by coprecipitation route have been investigated in detail. DSC-TGA, XRD and HRTEM studies have been explored to confirm the phase purity and structure. Most possible cation distribution as estimated by Rietveld analysis suggests the formation ofmixed spinel ferrite phase by the migration of Co 2+ ions from B site to A site and hence Fe 3+ ions from A site to B site in different amounts due to the doping of Mn and Ni ions. UV–vis study reveals a red shift for Mn and Mn-Ni co-doped samples while a blue shift was observed in case of Ni doping. Conductivity spectra follows the double power law and the modulus spectroscopy study indicates the coexistence of two incomplete relaxation processes in the system that arises due to the co-contribution from both grain and grain boundary which were thoroughly confirmed by complex impedance analysis. Improvement in the dielectric properties in the materials due to doping could be beneficial for device applications.