Cite
HARVARD Citation
Hu, S. et al. (2016). Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer. Solid-state electronics. pp. 146-151. [Online].
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Hu, S. et al. (2016). Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer. Solid-state electronics. pp. 146-151. [Online].