Cite
HARVARD Citation
Mbarek, S. et al. (2016). Gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectronics and reliability. pp. 415-418. [Online].
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Mbarek, S. et al. (2016). Gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectronics and reliability. pp. 415-418. [Online].