Cite
HARVARD Citation
Broas, M. et al. (2016). Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. Microelectronics and reliability. pp. 541-546. [Online].
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Broas, M. et al. (2016). Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. Microelectronics and reliability. pp. 541-546. [Online].