Cite
HARVARD Citation
Jang, H. et al. (2016). Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors. Microelectronics and reliability. pp. 570-574. [Online].
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Jang, H. et al. (2016). Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors. Microelectronics and reliability. pp. 570-574. [Online].