Plasma-enhanced atomic layer deposition of BaTiO3. (15th January 2016)

• Record Type: Journal Article
• Authors: Schindler, Peter; Kim, Yongmin; Thian, Dickson; An, Jihwan; Prinz, Fritz B.
• Is Part Of: Scripta materialia. Volume 111(2016)
• Page Start: 106
• Page End: 109
• Publication Date: 2016-01-15
• Subjects: High-k thin films -- Atomic layer deposition (ALD) -- Plasma-enhanced ALD -- DRAM capacitor; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2015.08.026
• Languages: English
• ISSNs: 1359-6462

Abstract

Graphical abstract: Abstract: Among high- k thin films, perovskite BaTiO3 (BTO) is an attractive candidate due to its exceptionally high dielectric constant. In contrast to conventional atomic layer deposition (ALD), plasma-enhanced ALD (PEALD) has several advantages such as lower process temperature, improved film quality and the deposition of a wider spectrum of materials. We report the successful deposition of high- k BTO thin films by PEALD. Compositional, morphological, and crystallographic characterizations of PEALD BTO are presented. The electrical performance of PEALD BTO thin films as a function of Ba-to-Ti-ratio is shown. Slightly Ti-rich BTO has the lowest equivalent oxide thickness while Ba-rich films show the lowest leakage current.