2D Materials: Chemical Growth of 1T‐TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity (Adv. Mater. 38/2018). Issue 38 (17th September 2018)

• Record Type: Journal Article
• Authors: Wang, Xinsheng; Liu, Haining; Wu, Juanxia; Lin, Junhao; He, Wen; Wang, Hui; Shi, Xinghua; Suenaga, Kazutomo; Xie, Liming
• Is Part Of: Advanced materials. Volume 30:Issue 38(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-17
• Subjects: 2D materials -- bolometers -- charge density waves -- chemical vapor deposition -- TaS2; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201870289
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Chemical synthesis of two‐dimensional charge‐density‐wave (CDW) materials on insulating substrates is important. In article number1800074, Liming Xie and co‐workers develop a chemical vapor deposition (CVD) strategy to synthesize 1 T ‐TaS2 monolayers and few‐layers on hexagonal boron nitride (h‐BN). Robust CDW transitions are observed down to the monolayer extreme and highly responsive room‐temperature bolometers are fabricated and demonstrated.