Annealing temperature effects on the electrical properties of (K, Na) NbO3 thin film fabricated by a sol-gel process with a citrate precursor solution. (15th March 2016)

• Record Type: Journal Article
• Authors: Yao, L.; Zhu, K.; Wang, J.; Liu, J.; Qiu, J.; Cheng, M.; Gu, Q.
• Is Part Of: Ferroelectrics. Volume 493(2016)
• Page Start: 47
• Page End: 53
• Publication Date: 2016-03-15
• Subjects: KNN film -- Nb2O5 -- sol-gel process -- annealing temperature -- electrical property; Ferroelectricity -- Periodicals; Ferroelectric crystals -- Periodicals; 537
• DOI: 10.1080/00150193.2016.1133213
• Languages: English
• ISSNs: 0015-0193

Abstract

ABSTRACT: Utilizing the comparatively low cost niobium pentoxide (Nb2 O5 ) as raw material, (K, Na)NbO3 (KNN) thin films were deposited onto Ti substrate by a sol–gel non-alkoxide process. The effects of annealing temperature on the phase, morphology, dielectric, and ferroelectric properties of KNN thin films were investigated. KNN thin films without impurities were obtained above 700°C, and the microstructure of all films were dense and uniform. A maximum dielectric constant of 480 was obtained in the film annealed at 700°C, which is comparable to the film prepared from niobium ethoxide.