Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg0.05Zn0.95O/CIGSe heterojunction by photoelectron spectroscopy. (5th November 2015)

• Record Type: Journal Article
• Authors: Awasthi, Vishnu; Pandey, Sushil Kumar; Kumar, Shailendra; Mukherjee, C; Gupta, Mukul; Mukherjee, Shaibal
• Is Part Of: Journal of physics. Volume 48:Number 48(2015)
• Publication Date: 2015-11-05
• Subjects: CIGSe -- GMZO -- DIBS -- UPS -- VBOn -- VBOff -- Plasmonic; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/48/48/485305
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The bandgap alignment of a Ga-doped MgZnO (GMZO)/CIGSe heterojunction exposed to short duration Ar + ion beam sputtering has been investigated by ultraviolet photoelectron spectroscopy measurement. The offset values at the valence and conduction band of the GMZO/CIGSe hetrojunction are calculated to be 2.69 and −0.63 eV, respectively. Moreover, the valence band onsets of GMZO and CIGSe thin films before and after few minutes Ar + ion sputtering have been investigated. The presented study demonstrates the photoelectron-induced generation of resonant valence bulk and surface plasmonic features of various metal and metal oxide nanoclusters embedded within a GMZO matrix. The presence of such nanoclusters is proven to be beneficial in realizing cost-effective, ultra-thin, and high-performance photovoltaics based on the heterojunction.