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HARVARD Citation
Bao, Q. et al. (n.d.). Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure. Semiconductor science and technology. p. . [Online].
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Bao, Q. et al. (n.d.). Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure. Semiconductor science and technology. p. . [Online].