Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions. (14th January 2016)
- Record Type:
- Journal Article
- Title:
- Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions. (14th January 2016)
- Main Title:
- Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions
- Authors:
- Kang, Wang
Wang, Zhaohao
Zhang, Youguang
Klein, Jacques-Olivier
Lv, Weifeng
Zhao, Weisheng - Abstract:
- Abstract: Conventional complementary metal-oxide-semiconductor (CMOS) technology is now approaching its physical scaling limits to enable Moore's law to continue. Spintronic devices, as one of the potential alternatives, show great promise to replace CMOS technology for next-generation low-power integrated circuits in nanoscale technology nodes. Until now, spintronic memory has been successfully commercialized. However spintronic logic still faces many critical challenges (e.g. direct cascading capability and small operation gain) before it can be practically applied. In this paper, we propose a standard complimentary spintronic logic (CSL) design methodology to form a CMOS-like logic design paradigm. Using the spin Hall effect (SHE)-driven magnetic tunnel junction (MTJ) device as an example, we demonstrate CSL implementation, functionality and performance. This logic family provides a unified design methodology for spintronic logic circuits and partly solves the challenges of direct cascading capability and small operation gain in the previously proposed spintronic logic designs. By solving a modified Landau–Lifshitz–Gilbert equation, the magnetization dynamics in the free layer of the MTJ is theoretically described and a compact electrical model is developed. With this electrical model, numerical simulations have been performed to evaluate the functionality and performance of the proposed CSL design. Simulation results demonstrate that the proposed CSL design paradigm isAbstract: Conventional complementary metal-oxide-semiconductor (CMOS) technology is now approaching its physical scaling limits to enable Moore's law to continue. Spintronic devices, as one of the potential alternatives, show great promise to replace CMOS technology for next-generation low-power integrated circuits in nanoscale technology nodes. Until now, spintronic memory has been successfully commercialized. However spintronic logic still faces many critical challenges (e.g. direct cascading capability and small operation gain) before it can be practically applied. In this paper, we propose a standard complimentary spintronic logic (CSL) design methodology to form a CMOS-like logic design paradigm. Using the spin Hall effect (SHE)-driven magnetic tunnel junction (MTJ) device as an example, we demonstrate CSL implementation, functionality and performance. This logic family provides a unified design methodology for spintronic logic circuits and partly solves the challenges of direct cascading capability and small operation gain in the previously proposed spintronic logic designs. By solving a modified Landau–Lifshitz–Gilbert equation, the magnetization dynamics in the free layer of the MTJ is theoretically described and a compact electrical model is developed. With this electrical model, numerical simulations have been performed to evaluate the functionality and performance of the proposed CSL design. Simulation results demonstrate that the proposed CSL design paradigm is rather promising for low-power logic computing. … (more)
- Is Part Of:
- Journal of physics. Volume 49:Number 6(2016)
- Journal:
- Journal of physics
- Issue:
- Volume 49:Number 6(2016)
- Issue Display:
- Volume 49, Issue 6 (2016)
- Year:
- 2016
- Volume:
- 49
- Issue:
- 6
- Issue Sort Value:
- 2016-0049-0006-0000
- Page Start:
- Page End:
- Publication Date:
- 2016-01-14
- Subjects:
- direct cascading -- magnetic tunnel junction -- spin Hall effect -- spintronic logic
Physics -- Periodicals
530 - Journal URLs:
- http://ioppublishing.org/ ↗
http://iopscience.iop.org/0022-3727 ↗ - DOI:
- 10.1088/0022-3727/49/6/065008 ↗
- Languages:
- English
- ISSNs:
- 0022-3727
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 7568.xml