Transfer printing of CVD graphene FETs on patterned substrates. Issue 33 (5th August 2015)

• Record Type: Journal Article
• Authors: Abhilash, T. S.; De Alba, R.; Zhelev, N.; Craighead, H. G.; Parpia, J. M.
• Is Part Of: Nanoscale. Volume 7:Issue 33(2015)
• Page Start: 14109
• Page End: 14113
• Publication Date: 2015-08-05
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr03501e
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Scalable fabrication of CVD graphene FETs on pre-patterned substrates. Abstract : We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA-cleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 ± 340 Ω μm. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.