Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy. Issue 29 (2nd July 2015)

• Record Type: Journal Article
• Authors: Kwon, Sangku; Lee, Seon Joo; Kim, Sun Mi; Lee, Youngkeun; Song, Hyunjoon; Park, Jeong Young
• Is Part Of: Nanoscale. Volume 7:Issue 29(2015)
• Page Start: 12297
• Page End: 12301
• Publication Date: 2015-07-02
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr02285a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : The nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum was investigated. Abstract : The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal–semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current–voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 ± 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface.