Ultrathin ZrBxOy films as diffusion barriers in Cu interconnects. (September 2015)

• Record Type: Journal Article
• Authors: Meng, Y.; Song, Z.X.; Chen, J.H.; Ma, F.; Li, Y.H.; Wang, J.F.; Wang, C.C.; Xu, K.W.
• Is Part Of: Vacuum. Volume 119(2015)
• Page Start: 1
• Page End: 6
• Publication Date: 2015-09
• Subjects: Ultrathin ZrBxOy films -- Diffusion barrier -- Cu interconnect; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2015.04.026
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Ultra-thin ZrBx Oy films 5 nm in thickness were prepared by radio-frequency (rf) magnetron sputtering. The thermal stability and the barrier performance against the inter-diffusion between Cu and Si were studied via thermal annealing at different temperatures. The as-deposited amorphous ZrBx Oy thin films could effectively block the inter-diffusion of Cu and Si atoms. However, the thin films became invalid at temperatures higher than 600 °C and significant atomic diffusion occurred, resulting in high-resistivity Cu3 Si compound. Hence, ZrBx Oy thin films can be exploited as diffusion barriers in Cu interconnects at temperatures lower than 600 °C. Highlights: Ultra-thin amorphous ZrBx Oy films 5 nm in thickness were fabricated by radio-frequency magnetron sputtering. The ultra-thin amorphous ZrBx Oy films can exist stably up to at least 500 °C. They can be adopted as diffusion barrier in Cu interconnects to block the inter-diffusion between Cu and Si atoms.