Cite
HARVARD Citation
Wang, X. et al. (2018). 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate. Superlattices and microstructures. pp. 1-8. [Online].
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Wang, X. et al. (2018). 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate. Superlattices and microstructures. pp. 1-8. [Online].