High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends. (13th June 2018)

• Record Type: Journal Article
• Authors: Haase, Katherina; Teixeira da Rocha, Cecilia; Hauenstein, Christoph; Zheng, Yichu; Hambsch, Mike; Mannsfeld, Stefan C. B.
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 8(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-06-13
• Subjects: high charge carrier mobility -- organic field‐effect transistors -- organic semiconductors -- small molecule:polymer blends -- solution‐processing; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800076
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Organic field‐effect transistors based on aligned small molecule semiconductors have shown high charge carrier mobilities in excess of 10 cm 2 V −1 s −1 . This makes them a viable alternative to amorphous inorganic semiconductors especially if a high reproducibility can be achieved. Here, the optimization of high mobility organic field‐effect transistors based on the organic semiconductor 2, 7‐dioctyl[1]benzothieno[3, 2‐ b ] benzothiophene (C8‐BTBT) via the addition of a polymer additive to the printing solution is reported. Specifically, films and devices are compared based on solutions of the neat semiconductor and the blend with polystyrene and shear‐coated devices with excellent device characteristics and gate‐voltage‐independent mobility values reaching 12 cm 2 V −1 s −1 are shown, which are the highest reported values for C8‐BTBT‐based films prepared by a scalable, solution‐based process. Abstract : Organic field‐effect transistors with semiconductor films prepared by solution shearing and high charge carrier mobilities are presented. By blending the small molecule semiconductor 2, 7‐dioctyl[1]benzothieno[3, 2‐ b ] benzothiophene (C8‐BTBT) with polystyrene, both the carrier mobility and the reproducibility of the devices are improved compared to devices with the neat semiconductor.