Ion Beam Modification of ZnO Epilayers: Sequential Processing. Issue 16 (17th April 2018)

• Record Type: Journal Article
• Authors: Turos, Andrzej; Ratajczak, Renata; Mieszczynski, Cyprian; Jozwik, Przemyslaw; Stonert, Anna; Prucnal, Slawomir; Heller, Rene; Skorupa, Wolfgang; von Borany, Johannes; Guziewicz, Elzbieta
• Other Names: Guziewicz Elżbieta guestEditor.; Paskaleva Albena guestEditor.; Knez Mato guestEditor.; Österlund Lars guestEditor.
• Is Part Of: Physica status solidi. Volume 215:Issue 16(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-04-17
• Subjects: defects -- ion implantation -- photoluminescence -- Rutherford backscattering -- zinc oxide; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700887
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Defect agglomeration in ion‐implanted compound semiconductors produces lattice stress eventually causing plastic deformation at sufficiently high fluence. Consequently, a dislocations tangle is formed which can hardly be completely removed by thermal annealing. To solve this problem, a new method of sequential processing has been developed consisting of low fluence ion implantation followed by subsequent annealing. The procedure can be then repeated until the required impurity concentration has been reached without producing excessive damage. Epitaxial ZnO layers are grown using the atomic layer deposition (ALD) technique. Structural changes in ZnO epilayers due to Yb‐ion implantation and subsequent annealing are analyzed by Rutherford backscattering/channeling (RBS/c) and photoluminescence (PL). Correlation between defect transformations and PL efficiency is determined. Increased Yb‐atom optical activation upon sequential processing as compared to the standard single‐step annealing is observed. Abstract : In compound semiconductors implanted to high ion fluence a dislocations tangle is formed, which cannot be completely removed by the standard thermal annealing. This paper proposes a solution based on the sequential processing consisting of low‐fluence ion implantation followed by the subsequent annealing. This procedure can be repeated until the required impurity ion concentration has been reached without producing excessive damage.