Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry. (5th December 2014)

• Record Type: Journal Article
• Authors: Xie, Deng; Qiu, Zhi Ren; Talwar, Devki N.; Liu, Yi; Song, Jen–Hao; Huang, Jow–Lay; Mei, Ting; Liu, Chee Wee; Fang, Zhe Chuan
• Is Part Of: International journal of nanotechnology. Volume 12:Number 1/2(2015)
• Page Start: 97
• Page End: 110
• Publication Date: 2014-12-05
• Subjects: BAlN film -- boron aluminium nitride -- co–sputtering -- dielectric function -- spectroscopic ellipsometry -- diamond substrate -- optical parameters; 620.505
• Languages: English
• ISSNs: 1475-7435

Abstract

Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co–sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.