Cite
HARVARD Citation
Zhang, K. et al. (2015). Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off–state leakage. International journal of nanotechnology. pp. 111-125. [Online].
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Zhang, K. et al. (2015). Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off–state leakage. International journal of nanotechnology. pp. 111-125. [Online].