Repair of defects created by Ar+ sputtering on graphite surface by annealing as confirmed using ToF‐SIMS and XPS. (5th July 2018)

• Record Type: Journal Article
• Authors: Xie, Wenjing; Weng, Lu‐Tao; Yeung, King Lun; Chan, Chi‐Ming
• Is Part Of: Surface and interface analysis. Volume 50:Number 9(2018)
• Page Start: 851
• Page End: 859
• Publication Date: 2018-07-05
• Subjects: annealing -- defect repair -- HOPG -- ToF‐SIMS -- XPS; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6487
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : Defects were created on the surface of highly oriented pyrolytic graphite (HOPG) by sputtering with an Ar + ion beam, then characterized using X‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) at 500°C. In the XPS C1s spectrum of the sputtered HOPG, a sp 3 carbon peak appeared at 285.3 eV, representing surface defects. In addition, 2 sets of peaks, the C x − and C x H − ion series (where x = 1, 2, 3...), were identified in the ToF‐SIMS negative ion spectrum. In the positive ion spectrum, a series of C x H2 + ions indicating defects was observed. Annealing of the sputtered samples under Ar was conducted at different temperatures. The XPS and ToF‐SIMS spectra of the sputtered HOPG after 800°C annealing were observed to be similar to the spectra of the fresh HOPG. The sp 3 carbon peak had disappeared from the C1s spectrum, and the normalized intensities of the C x H − and C x H2 + ions had decreased. These results indicate that defects created by sputtering on the surface of HOPG can be repaired by high‐temperature annealing.