Local Joule Heating Mimicking Electroresistance‐Like Behavior in Antiperovskite Mn3GaC. (15th July 2018)

• Record Type: Journal Article
• Authors: Deng, Sihao; Fischer, Gerda; Srichandan, Sasmita; Wang, Lielin; Wang, Cong; Sürgers, Christoph
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 9(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-07-15
• Subjects: antiperovskite -- electroresistance -- Joule heating -- phase coexistence; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800028
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Electroresistance has become a stimulating research topic because of its potential applications in next‐generation nonvolatile memory technology. Here, an electroresistance‐like behavior of the antiperovskite Mn3 GaC compound around the antiferromagnetic–intermediate phase transition is reported. A high sensing current significantly decreases the fraction of the antiferromagnetic phase of higher resistivity relative to the intermediate phase of lower resistivity upon warming, showing a resistivity change up to 50%. Through extensive studies of the resistivity at different sample locations and of the magnetization under applied current, it is unambiguously shown that this electroresistance‐like behavior originates from the local Joule heating of the sample due to high‐resistive lead contacts and not from an intrinsic effect. These findings open an available avenue to explore electroresistance‐like behavior by achieving phase coexistence of a high‐ and low‐resistivity phase under the driving force of local Joule heating. Abstract : An electroresistance‐like behavior with a resistivity change up to 50%, around the antiferromagnetic phase transition, is first found in antiperovskite Mn3 GaC due to local Joule heating effects revealed by extensive studies of the resistivity and magnetization behavior under applied current. The results hold great promise for the development of compounds exhibiting electroresistance behavior for next‐generation nonvolatile memory technology.