Growth‐Parameter Dependence of Polarity and Electronic Transports in ZnO Thin Films Deposited by Magnetron Sputtering. Issue 16 (12th March 2018)

• Record Type: Journal Article
• Authors: Ohsawa, Takeo; Tsunoda, Kei; Dierre, Benjamin; Grachev, Sergey; Montigaud, Hervé; Ishigaki, Takamasa; Ohashi, Naoki
• Other Names: Guziewicz Elżbieta guestEditor.; Paskaleva Albena guestEditor.; Knez Mato guestEditor.; Österlund Lars guestEditor.
• Is Part Of: Physica status solidi. Volume 215:Issue 16(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-03-12
• Subjects: films -- magnetron sputtering -- polarity -- zinc oxide; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700838
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Growth‐parameter dependence of crystalline polarity and associated electronic transport properties of zinc oxide (ZnO) thin films deposited by radio‐frequency magnetron sputtering are investigated. The magnitudes of sputtering input power and distance between the substrate and ZnO target play crucial roles in controlling the polarity either the (0001) or ( 000 1 ¯ ) planes. In addition, the crystallinities and surface morphologies of the films are largely different between the two types of planes. Remarkably, electrical conductivities of the (0001) films are a few orders of magnitude higher than those of the ( 000 1 ¯ ) planes, which could be attributed to differences in the carrier concentration and Hall mobility. Insights gained in this study regarding controllable polarity is significant for understanding complicated optoelectronic properties even in nominally undoped ZnO films. Abstract : Growth‐parameter dependence of crystalline polarity and associated electronic transport properties of zinc oxide (ZnO) thin films are investigated. Electrical conductivities of the (0001) films are a few orders of magnitude higher than those of the ( 000 1 ¯ ) planes. Insights gained in this study regarding controllable polarity is significant for understanding complicated optoelectronic properties in nominally undoped ZnO films.