First‐Principles Calculations on the Group‐IIIA Elements X‐Doped (X = Ga, In, Tl) VO2. Issue 8 (25th June 2018)
- Record Type:
- Journal Article
- Title:
- First‐Principles Calculations on the Group‐IIIA Elements X‐Doped (X = Ga, In, Tl) VO2. Issue 8 (25th June 2018)
- Main Title:
- First‐Principles Calculations on the Group‐IIIA Elements X‐Doped (X = Ga, In, Tl) VO2
- Authors:
- Ren, Qinghua
Cai, Ying
Wang, Yuling
Gao, Yanfeng - Abstract:
- Abstract : The optimized geometrical parameters, energy band structures, density of states, thermodynamic properties of the group‐IIIA elements X‐doped (X = Ga, In, Tl) VO2 have been studied using first‐principles calculations. The effect of the impurities on the phase transition temperature ( Tc ) is also investigated. The substitutional site of V atom and the octahedral interstitial site are considered as the doping positions. Our calculated results show that the hybridization between electronic orbitals of different atoms causes a decrease of E g2 value by shifting the valence band toward the higher energy and the conduction band toward the lower energy when X is doped at the substitutional site of V atom (i.e., X@V). For the interstitial doped system (i.e., X@i), the Fermi level enters the conduction band to show the metallic property. The Tc of X‐doped (X = Ga, In, Tl) VO2 is reduced compared to that of pure VO2 . Indium@V could be a promising element to reduce Tc of VO2 as a smart window material. Abstract : The optimized geometrical parameters, energy band structures, density of states, the phase transition temperature T c and thermodynamic properties of X‐doped VO2 (with X = Ga, In, Tl atoms at the octahedral interstitial sites or as replacement at V sites) are studied using DFT calculations. The authors' results show that all X‐doped VO2 can reduce T c and In‐doped VO2 can be a promising candidate to obtain good thermochromic energy‐saving materials for applicationAbstract : The optimized geometrical parameters, energy band structures, density of states, thermodynamic properties of the group‐IIIA elements X‐doped (X = Ga, In, Tl) VO2 have been studied using first‐principles calculations. The effect of the impurities on the phase transition temperature ( Tc ) is also investigated. The substitutional site of V atom and the octahedral interstitial site are considered as the doping positions. Our calculated results show that the hybridization between electronic orbitals of different atoms causes a decrease of E g2 value by shifting the valence band toward the higher energy and the conduction band toward the lower energy when X is doped at the substitutional site of V atom (i.e., X@V). For the interstitial doped system (i.e., X@i), the Fermi level enters the conduction band to show the metallic property. The Tc of X‐doped (X = Ga, In, Tl) VO2 is reduced compared to that of pure VO2 . Indium@V could be a promising element to reduce Tc of VO2 as a smart window material. Abstract : The optimized geometrical parameters, energy band structures, density of states, the phase transition temperature T c and thermodynamic properties of X‐doped VO2 (with X = Ga, In, Tl atoms at the octahedral interstitial sites or as replacement at V sites) are studied using DFT calculations. The authors' results show that all X‐doped VO2 can reduce T c and In‐doped VO2 can be a promising candidate to obtain good thermochromic energy‐saving materials for application in smart windows. … (more)
- Is Part Of:
- Physica status solidi. Volume 255:Issue 8(2018)
- Journal:
- Physica status solidi
- Issue:
- Volume 255:Issue 8(2018)
- Issue Display:
- Volume 255, Issue 8 (2018)
- Year:
- 2018
- Volume:
- 255
- Issue:
- 8
- Issue Sort Value:
- 2018-0255-0008-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2018-06-25
- Subjects:
- first‐principles calculations -- VO2 -- doping -- IIIA elements
Solid state physics -- Periodicals
Solids -- Periodicals
Atomic structure -- Periodicals
530.41 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-3951 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/pssb.201800138 ↗
- Languages:
- English
- ISSNs:
- 0370-1972
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6475.230000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 7443.xml