An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator. Issue 9 (11th August 2018)

• Record Type: Journal Article
• Authors: Maricar, Mohamed Ismaeel; Khalid, Ata; Dunn, Geoff; Greedy, Steve; Thomas, Dave; Cumming, David R. S.; Oxley, Chris H.
• Is Part Of: Microwave and optical technology letters. Volume 60:Issue 9(2018:Sep.)
• Page Start: 2144
• Page End: 2148
• Publication Date: 2018-08-11
• Subjects: active channel length -- electrical equivalent circuit model -- GaAs -- impedance -- planar Gunn diode -- RF output power; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.31312
• Languages: English
• ISSNs: 0895-2477

Abstract

Abstract: The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.