Cite
HARVARD Citation
Nouri, A. et al. (2018). Elimination of Oxidation‐Induced Stacking Faults in Silicon Single Crystals Using the Kyropoulos Crystal Growth Method. Physica status solidi. 215 (17), p. n/a. [Online].
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Nouri, A. et al. (2018). Elimination of Oxidation‐Induced Stacking Faults in Silicon Single Crystals Using the Kyropoulos Crystal Growth Method. Physica status solidi. 215 (17), p. n/a. [Online].