Direct Growth of MoS2 and WS2 Layers by Metal Organic Chemical Vapor Deposition. Issue 16 (2nd May 2018)

• Record Type: Journal Article
• Authors: Cwik, Stefan; Mitoraj, Dariusz; Mendoza Reyes, Oliver; Rogalla, Detlef; Peeters, Daniel; Kim, Jiyeon; Schütz, Hanno Maria; Bock, Claudia; Beranek, Radim; Devi, Anjana
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 16(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-05-02
• Subjects: chemical vapor deposition -- molybdenum disulfide -- photoelectrochemical water splitting -- transition metal dichalcogenides -- tungsten disulfide; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201800140
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: For the growth of 2D transition metal dichalcogenides, such as molybdenum (MoS2 ) and tungsten disulfides (WS2 ), metalorganic chemical vapor deposition (MOCVD) routes are favorable due to their superior scalability, the possibility to tune the processing temperatures by a proper choice of reactants thus avoiding the need for a postdeposition treatment. Herein, the first example of a promising MOCVD route for the direct fabrication of MoS2 and WS2 layers under moderate process conditions is reported. This straightforward route is successfully realized by the combination of metalorganic precursors of Mo or W bearing the amidinato ligand with just elemental sulfur. The formation of stoichiometric hexagonal 2H‐MoS2 and 2H‐WS2 is demonstrated which is confirmed by Raman, X‐ray diffraction, and X‐ray photoelectron spectroscopy studies. The deposited layers are evaluated for their electrocatalytic activity in hydrogen evolution reaction as a proof of principle for application in water splitting devices. Abstract : Homogenous molybdenum disulfide (MoS2 ) and tungsten disulfide (WS2 ) layers are fabricated via metalorganic chemical vapor deposition. Direct transition metal disulfide growth in the presence of elemental sulfur vapor is enabled by the reactivity of the imido‐amidinato precursors at 600–800 °C. Stoichiometric MoS2 thin films are formed in the complete temperature range and preliminary investigations indicate potential for the application in photoelectrochemical water splitting.