Atomic Layer Deposited TiO2–IrOx Alloy as a Hole Transport Material for Perovskite Solar Cells. Issue 16 (8th July 2018)

• Record Type: Journal Article
• Authors: Tan, Wanliang; Hendricks, Olivia L.; Meng, Andrew C.; Braun, Michael R.; McGehee, Michael D.; Chidsey, Christopher E. D.; McIntyre, Paul C.
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 16(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-07-08
• Subjects: atomic layer deposition -- alloy -- hole transport materials -- perovskite solar cells; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201800191
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: The hole transport layer (HTL) is one of the key components in planar perovskite solar cells. This study reports a new kind of HTL fabricated using atomic layer deposition (ALD). By alloying TiO2 with IrO x, it is demonstrated that TiO2, a well‐known electron‐selective contact and electron transport layer in photovoltaic devices, can behave as an HTL with an appropriately high work function. Perovskite Cs0.17 FA0.83 Pb(I0.83 Br0.17 )3 solar cells including this new hole transport material achieve a power conversion efficiency of 15.8% under AM 1.5G simulated solar irradiation compared to a 14.3% efficiency for otherwise‐identical devices incorporating a more standard NiO HTL layer. These results suggest the promise of transition metal oxide alloys synthesized by ALD as hole contact materials for optoelectronic devices, including advanced photovoltaics. Abstract : This study reports on a new kind of hole transport layers (HTL) fabricated using atomic layer deposition for perovskite solar cell. By alloying TiO2 with IrO x, it is demonstrated that TiO2 –IrO x alloys can behave as HTLs with an appropriately high work function. Perovskite Cs0.17 FA0.83 Pb(I0.83 Br0.17 )3 solar cells including this new HTL achieve a power conversion efficiency of 15.8% with high open circuit voltage.