Structure of the Copper–Enriched Layer Introduced by Anodic Oxidation of Copper-Containing Aluminium Alloy. (10th October 2015)

• Record Type: Journal Article
• Authors: Hashimoto, T.; Zhou, X.; Skeldon, P.; Thompson, G.E.
• Is Part Of: Electrochimica acta. Volume 179(2015)
• Page Start: 394
• Page End: 401
• Publication Date: 2015-10-10
• Subjects: Anodizing -- Copper enrichment -- Orientation -- Aluminium Alloy; Electrochemistry -- Periodicals; Electrochemistry, Industrial -- Periodicals; 541.37
• DOI: 10.1016/j.electacta.2015.01.133
• Languages: English
• ISSNs: 0013-4686

Abstract

Abstract: This paper investigates the structure of the copper–enriched layer formed at the alloy/anodic film interface during anodizing of Al–2 wt.% Cu binary alloy using transmission electron microscopy. It was revealed that θ ′ phase was formed within the copper–enriched layer. For the copper–enriched layer formed on {1 0 0} aluminum planes, the interface between the aluminum matrix and the θ ′ phase within the copper-enriched layer is coherent. For the copper–enriched layer formed on {1 1 0} and {1 1 1} aluminum planes, the interfaces between the aluminum matrix and the θ ′ phase within the copper-enriched layer are semi-coherent or incoherent. The interfacial coherency influences the formation of oxygen gas bubbles within the resultant anodic films.