Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses. (July 2016)

• Record Type: Journal Article
• Authors: Klym, H.; Ingram, A.; Shpotyuk, O.; Hotra, O.; Popov, A.I.
• Is Part Of: Radiation measurements. Volume 90(2016:Jul.)
• Page Start: 117
• Page End: 121
• Publication Date: 2016-07
• Subjects: Chalcogenide glass -- Alkali halide -- Positron trapping -- Free-volume defects -- Crystallization; Nuclear emulsions -- Periodicals; Particle tracks (Nuclear physics) -- Periodicals; Thermoluminescence -- Periodicals; Cosmic rays -- Periodicals; Radiation -- Measurement -- Periodicals; Radiometry -- Periodicals; Radiation Monitoring -- Periodicals; Émulsions nucléaires -- Périodiques; Particules (Physique nucléaire) -- Traces -- Périodiques; Thermoluminescence -- Périodiques; Rayonnement cosmique -- Périodiques; Radiométrie -- Périodiques; 539.77
• DOI: 10.1016/j.radmeas.2016.01.023
• Languages: English
• ISSNs: 1350-4487

Abstract

Abstract: Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS2 –20Ga2 S3 )100−х (СsCl)x, 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS2 –20Ga2 S3 )100−х (СsCl)x, 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS2 –20Ga2 S3 )85 (СsCl)15 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defect-related voids. These trends are confirmed by positron-positronium decomposition algorithm. It is shown, that CsCl additives result in white shift in the visible regions in transmission spectra. The γ-irradiation of 80GeS2 –20Ga2 S3 base glass leads to slight long-wavelength shift of the fundamental optical absorption edge and decreasing of transmission speaks in favor of possible formation of additional defects in glasses and their darkening. Highlights: CsCl additives in Ge–Ga–S glassy matrix lead to the agglomeration of voids. Full crystallization of Ge–Ga–S–CsCl glasses corresponds to the formation of defect voids. Gamma-irradiation of glass stimulates the creation of additional defects and darkening.