Improved Cut-off Frequency for Cylindrical Gate TFET Using Source Delta Doping. (2016)

• Record Type: Journal Article
• Authors: Dash, Sidhartha; Sahoo, Girija Shankar; Mishra, Guru Prasad
• Is Part Of: Procedia technology. Volume 25(2016)
• Page Start: 450
• Page End: 455
• Publication Date: 2016
• Subjects: CG-TFET -- delta-doping sheet -- cut-off frequency ;transconductance.; Technology -- Congresses; Technology -- Periodicals; Engineering -- Congresses; Engineering -- Periodicals; Engineering; Technology; Conference proceedings; Periodicals; 605
• DOI: 10.1016/j.protcy.2016.08.131
• Languages: English
• ISSNs: 2212-0173

Abstract

Abstract: The radio-frequency (RF) performance of delta-doped cylindrical gate Tunnel FET (DCG-TFET) has been investigated and compared with conventional CG-TFET in terms of total gate capacitance, transconductance and cut-off frequency. Because of the higher transconductance due to insertion of delta-doping sheet in the source region, the DCG-TFET model exhibit higher cut-off frequency and smaller intrinsic delay. The impact of variation in gate oxide thickness and silicon pillar diameter on cut-off frequency has also been discussed for the model. The achievement of high cut-off frequency enables the model to be part of a solution in high frequency application. However the RF parameters have been extracted using 2D TCAD device simulator from Synopsis.