Restoring defect structures in 3C-SiC/Si (0 0 1) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing. (April 2015)

• Record Type: Journal Article
• Authors: Wen, C.; Wan, W.; Li, F.H.; Tang, D.
• Is Part Of: Micron. Volume 71(2015:Apr.)
• Page Start: 22
• Page End: 31
• Publication Date: 2015-04
• Subjects: 68.37.Og -- 42.30.−d -- 61.72.Nn -- 61.72.Lk -- 68.55.ag; Aberration-corrected high-resolution transmission electron microscopy -- Image deconvolution -- Stacking fault -- Lomer dislocation -- Perfect 60° dislocation -- 3C-SiC/Si; Microscopy -- Periodicals; Electron Probe Microanalysis -- Periodicals; Microscopy -- Periodicals; Microscopie -- Périodiques; Microscopy; Periodicals; 502.82
• DOI: 10.1016/j.micron.2014.12.008
• Languages: English
• ISSNs: 0968-4328

Abstract

Highlights: The deconvolution is performed for [1 1 0] C s -corrected HRTEM images of 3 C -SiC/Si (0 0 1). Structure images are obtained with all atomic columns appearing as individual dots. Core structures of defects are derived as well as the recognition of Si and C atoms. An intrinsic stacking fault, Lomer and 60° dislocations are derived at atomic level. The results show the deconvolution method remains valid for the C s -corrected images. Abstract: The [1 1 0] cross-sectional samples of 3 C -SiC/Si (0 0 1) were observed with a spherical aberration-corrected 300 kV high-resolution transmission electron microscope. Two images taken not close to the Scherzer focus condition and not representing the projected structures intuitively were utilized for performing the deconvolution. The principle and procedure of image deconvolution and atomic sort recognition are summarized. The defect structure restoration together with the recognition of Si and C atoms from the experimental images has been illustrated. The structure maps of an intrinsic stacking fault in the area of SiC, and of Lomer and 60° shuffle dislocations at the interface have been obtained at atomic level.